driver & gain block amplifiers - chip 2 2 - 66 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com gaas hemt mmic driver amplifier, 17.5 - 41.0 ghz v01.0208 general description features functional diagram gain: 21 db p1db output power: +20 dbm wideband performance: 17.5 to 40 ghz supply voltage: +5v @ 295 ma small chip size: 2.1 x 0.92 x 0.1 mm electrical speci cations [1] , t a = +25c vdd1 = vdd2 = vdd3 = vdd4 = 5v, idd1 + idd2 + idd3 + idd4 = 295ma [2] typical applications this hmc-auh256 is ideal for: ? point-to-point radios ? point-to-multi-point radios ? vsat ? satcom the hmc-auh256 is a gaas mmic hemt four stage driver ampli er which covers the frequency range of 17.5 to 40 ghz. the chip can easily be integrated into multi-chip-modules (mcms) due to its small (1.93 mm2) size. the hmc-auh256 offers 21 db of gain and +20 dbm output power at 1 db compression from a bias supply of +5v @ 295 ma. the hmc-auh256 may also be used as a frequency doubler. detail bias condition to achieve doubler operation. hmc-auh256 parameter min. typ. max. units frequency range 17.5 - 41 ghz gain 21 db input return loss 8db output return loss 20 - 30 ghz 30 - 45 ghz 15 8 db db output power for 1 db compression 20 dbm saturated output power 23 dbm output ip3 27 dbm supply current (idd1 + idd2 + idd3 + idd4) 295 ma [1] unless otherwise indicated, all measurements are from probed die [2] adjust vgg1 = vgg2 = vgg3 = vgg4 between -1v to +0.3v (typ. -0.3v) to achieve idd1 = 50 ma, idd2 = 50 ma, idd3 = 75 ma, idd 4 = 120 ma
driver & gain block amplifiers - chip 2 2 - 67 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc-auh256 v01.0208 gaas hemt mmic driver amplifier, 17.5 - 41.0 ghz fixtured pout vs. frequency linear gain vs. frequency ip3 @ pout= 18 dbm/tone p3db p1db output return loss vs. frequency input return loss vs. frequency pout (dbm), ip3 (dbm) return loss (db) return loss (db) gain (db)
driver & gain block amplifiers - chip 2 2 - 68 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc-auh256 v01.0208 gaas hemt mmic driver amplifier, 17.5 - 41.0 ghz absolute maximum ratings drain bias voltage +5.5 vdc rf input power 15 dbm drain bias current (idd1, idd2) 62 ma drain bias current (idd3) 93 ma drain bias current (idd4) 150 ma gate bias voltage -1 to +0.3 vdc channel temperature 180 c thermal resistance (channel to die bottom) 77.5 c/w storage temperature -65 to +150 c electrostatic sensitive device observe handling precautions fixtured pout vs. frequency @ pin= 8 dbm fixtured pout vs. frequency @ pin= 10 dbm x2 pout vs. frequency (vs pad) note: multiplier performance characteristics (typical performance at 25c) vd1= 2v, vd2= vd3= vd4= 5v, id1= 5ma, id2+id3+id4= 245ma
driver & gain block amplifiers - chip 2 2 - 69 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing hmc-auh256 v01.0208 gaas hemt mmic driver amplifier, 17.5 - 41.0 ghz notes: 1. all dimensions are in inches [mm]. 2. typical bond pad is .004 square. 3. backside metallization: gold. 4. backside metal is ground. 5. bond pad metallization: gold. 6. connection not required for unlabeled bond pads. 7. overall die size .002 die packaging information [1] standard alternate gp-2 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
driver & gain block amplifiers - chip 2 2 - 70 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc-auh256 v01.0208 gaas hemt mmic driver amplifier, 17.5 - 41.0 ghz pad number function pad description interface schematic 1 rfin this pad is ac coupled and matched to 50 ohms. 2 - 5 vdd1-4 power supply voltage for ampli er. see assembly diagram for required external components. 6 rfout this pad is ac coupled and matched to 50 ohms. 7 - 10 vgg1-4 gate control for ampli er. please follow mmic ampli er bias- ing procedure application note. see assembly for required external components. die bottom gnd die bottom must be connected to rf/dc ground. pad descriptions
driver & gain block amplifiers - chip 2 2 - 71 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc-auh256 v01.0208 gaas hemt mmic driver amplifier, 17.5 - 41.0 ghz assembly diagram note 1: bypass caps should be 100 pf (approximately) ceramic (single-layer) placed no farther than 30 mils from the ampli er. note 2: best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output. note 3: vdd3 can be biased using on-chip pads vdd3 or vdd4
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